TK100E10N1 Mosfet IC - Toshiba

The TK100E10N1 is a high-performance 100V N-Channel Power MOSFET from Toshiba, designed for efficient power switching applications. This power FET IC comes in a DIP-3 package, making it easy to integrate into various electronic circuits and power management systems.

Key Features:

• 100V N-Channel Power MOSFET
• DIP-3 package for easy through-hole mounting
• High-quality Toshiba manufacturing
• Suitable for power switching applications
• Reliable performance in demanding circuits
• Compact form factor

Technical Specifications:

• Part Number: TK100E10N1
• Manufacturer: Toshiba
• Type: N-Channel Power MOSFET
• Voltage Rating: 100V
• Package Type: DIP-3 (Through-Hole)

Applications:

This N-Channel Power MOSFET is ideal for various power electronics applications including:

• Power supply circuits
• DC-DC converters
• Motor control systems
• Switching regulators
• Power management circuits
• Inverter applications
• Battery management systems

Important Notes:

• Product Images: Images shown are for illustrative purposes only and may differ from the actual product
• Technical Specifications: For detailed technical specifications, please refer to the datasheet available in the attachment section

Why Choose Toshiba MOSFETs:

Toshiba is a trusted name in semiconductor manufacturing, known for producing high-quality, reliable power MOSFETs. The TK100E10N1 offers excellent performance characteristics and durability for professional electronics projects and industrial applications.

Package Includes:

• 1 x TK100E10N1 MOSFET 100V N-Channel PWR FET IC (DIP-3 Package)
  
  
  
  

  Manufacturer:	TOSHIBA
  Model Name:	TK100E10N1
  Case/Package:	DIP 3
  Shipping Weight	0.001 kg
  Shipping Dimensions	1 × 1 × 1 cm